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8 1 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 5 0 1 0 s d 8 0 r sep 06, 2 013 the mark shows majo r re vised points. the re vised point s can be ea sily search ed b y co pyi ng an "" in th e pdf file and sp ecifying it in the " f ind what:" field. t e e h s a t a d ps9332l, ps9332l2 2.0 a ou tput curren t , hi gh cmr, i g bt gate drive, ac tive miller cl amp, 8-pin sdi p phot oc oup ler des cript ion t h e ps9 332 l a n d ps93 3 2 l2 a r e o p tical cou p l ed i s o l a t o r s c ont a i n i n g a g a a l a s l e d o n t h e i npu t s i d e a n d a p h o t o d iod e, a s ign a l p r ocessi n g c i r c u it a n d a p o w e r out put t r a n s i s t or o n t h e o u tpu t s i d e o n o n e chi p . the p s 9 332 l and p s 9 3 3 2 l 2 are desi g n e d s p eci f i cally f o r h i g h c o m m on m ode t r ansi ent i m m unity ( cmr), h i g h out put current, active miller cla m p and h i g h s w itch i ng spe e d . t h e ps9 3 3 2 l a n d ps93 3 2 l 2 a r e s u itab l e fo r drivi n g i g bt s an d m o s fe ts. fea t ure s ? l o n g cree page d i s t ance ( 8 m m m i n.: ps933 2 l2 ) ? p eak o u t p u t c u rre n t ( 2 . 0 a m a x ., 1 . 5 a m i n . ) ? h igh s p e e d s w itch i ng ( t plh , t phl = 2 0 0 n s m a x.) ? uvlo (und er v o ltag e l o ck o u t ) p r o t ectio n with h y steresi s ? b u ilt-in activ e miller cla m p ? h i g h c o m m o n m ode t r ans i e n t i m m u n ity ( c m h , cm l = 5 0 kv/ s min . ) ? ope r ating ambient tem p erature (125 c) ? e m b o sse d tap e p r odu ct : ps93 3 2 l - e 3 , ps9 3 3 2 l2- e 3 : 2 0 0 0 p c s / r eel ? pb- fr ee pro duct ? safety standards ? u l app r o v e d : n o . e 7 242 2 ? csa app r oved : n o . ca 101 391 ( ca5 a, c an/csa-c 2 2 . 2 6 006 5, 6 095 0 ) ? s e mko appr o v e d (en 6006 5, e n 6 0 950 ) ? d i n e n 6074 7-5 - 5 ( v d e 0 8 84- 5 ) a p prove d ( o p tion ) applications ? igbt , p o wer m o s fet gat e d r iver ? industrial inverter ? i h ( i ndu ctio n h eatin g ) r08 d s0 105e j01 00 rev.1.00 sep 06, 201 3 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 2 of 18 sep 06, 2013 package dimensions (unit: mm) lead bending type (gull-wing) for surface mount lead bending type (gull-wing) for long creepage distance (surface mount) ps9332l ps9332l2 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 3 of 18 sep 06, 2013 photocoupler construction parameter ps9332l ps9332l2 air distance (min.) 7 mm 8 mm outer creepage distance (min.) 8 mm 8 mm isolation distance (min.) 0.4 mm 0.4 mm marking example ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps9332l ps9332l-ax 20 pcs (tape 20 pcs cut) ps9332l-e3 PS9332L-E3-AX embossed tape 2 000 pcs/reel ps9332l ps9332l2 ps9332l2-ax 20 pcs (tape 20 pcs cut) ps9332l2-e3 ps9332l2-e3-ax embossed tape 2 000 pcs/reel standard products (ul, csa, semko approved) ps9332l2 ps9332l-v ps9332l-v-ax 20 pcs (tape 20 pcs cut) ps9332l-v-e3 ps9332l-v-e3-ax embossed tape 2 000 pcs/reel ps9332l ps9332l2-v ps9332l2-v-ax 20 pcs (tape 20 pcs cut) ps9332l2-v-e3 ps9332l2-v-e3-ax pb-free (ni/pd/au) embossed tape 2 000 pcs/reel din en 60747-5-5 (vde 0884-5) approved (option) ps9332l2 note: *1. for the application of the safety standard, following part number should be used. 9332 r n304 3n 04 no. 1 pin mark year assembled (last 1 digit) rank code week assembled assembly lot type number company initial a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 4 of 18 sep 06, 2013 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit forward current i f 25 ma peak transient forward current (pulse width < 1 s) i f (tran) 1.0 a reverse voltage v r 5 v diode power dissipation *1 p d 45 mw high level peak output current *2 i oh (peak) 2.0 a low level peak output current *2 i ol (peak) 2.0 a supply voltage (v cc ? v ee ) 0 to 35 v output voltage v o -0.5 to v cc v peak clamp sink current i clamp 2.0 a miller clamping pin voltage v clamp -0.5 to v cc v detector power dissipation *3 p c 250 mw isolation voltage *4 bv 5 000 vr.m.s. operating frequency *5 f 50 khz operating ambient temperature t a ? 40 to +125 c storage temperature t stg ? 55 to +150 c notes: *1. reduced to 1.1 mw/ c at t a = 105 c or more. *2. maximum pulse width = 10 s, maximum duty cycle = 0.2% *3. reduced to 5.5 mw/ c at t a = 105 c or more. *4. ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-4 shorted together, 5-8 shorted together. *5. i oh (peak) 2.0 a ( 0.3 s), i ol (peak) 2.0 a ( 0.3 s) recommended operating conditions parameter symbol min. typ. max. unit supply voltage (v cc ? v ee ) 15 30 v forward current (on) i f (on) 7 16 ma forward voltage (off) v f (off) ? 2 0.8 v operating ambient temperature t a ? 40 125 c a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 5 of 18 sep 06, 2013 electrical characteristics (at re commended operating conditions, v ee = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit forward voltage v f i f = 10 ma, t a = 25 c 1.35 1.56 1.75 v reverse current i r v r = 3 v, t a = 25 c 10 a diode input capacitance c in f = 1 mhz, v f = 0 v, t a = 25 c 30 pf v o = (v cc ? 4 v) *2 0.5 1.5 high level output current i oh v o = (v cc ? 15 v) *3 1.5 a v o = (v ee + 2.5 v) *2 0.5 1.5 low level output current i ol v o = (v ee + 15 v) *3 1.5 a clamp output peak current i clamp v clamp = v ee + 2.5v 0.5 1.6 a clamp pin threshold voltage v t clamp 3.0 v high level output voltage v oh i o = - 100 ma *4 v cc ? 3.0 v cc ? 1.3 v low level output voltage v ol i o = 100 ma 0.1 0.5 v high level supply current i cch i f = 10 ma, v o = open 1.5 2.5 ma low level supply current i ccl v f = 0 to 0.8 v, v o = open 1.5 2.5 ma v uvlo+ vo > 5v , i f = 10ma 10.8 12.4 13.4 uvlo threshold voltage v uvlo- vo < 5v , i f = 10ma 9.5 11.2 12.5 detector uvlo hysteresis uvlo hys (v uvlo+ ) - (v uvlo- ) 1.2 v threshold input current (l h) i flh i o = 0 ma, v o > 5 v 1.5 4.0 ma coupled threshold input voltage (h l) v fhl i o = 0 ma, v o < 5 v 0.8 v notes: *1. typical values at t a = 25 c. *2. maximum pulse width = 50 s, maximum duty cycle = 0.5%. *3. maximum pulse width = 10 s, maximum duty cycle = 0.2%. *4. v oh is measured with the dc load current in this test ing. (maximum pulse width = 2 ms, maximum duty cycle = 20%) switching characteristics (at re commended operating conditions, v ee = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit propagation delay time (l h) t plh 75 200 ns propagation delay time (h l) t phl 110 200 ns pulse width distortion (pwd) |t phl ? t plh | 35 75 ns propagation delay time (difference between any two products) t phl ? t plh ? 90 90 ns rise time t r 17 ns fall time t f r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% *2 , i f = 10 ma 17 ns common mode transient immunity at high level output |cm h | t a = 25 c, i f = 10 ma, v cc = 30 v, v cm = 1.5 kv v o (min.) = 26 v 50 kv/ s common mode transient immunity at low level output |cm l | t a = 25 c, i f = 0 ma, v cc = 30 v, v cm = 1.5 kv v o (max.) = 1v 50 kv/ s notes: *1. typical values at t a = 25 c. *2. this load condition is equivale nt to the igbt load at 1 200 v/75 a. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 6 of 18 sep 06, 2013 test circuit shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 fig. 1 i oh test circuit fig. 2 i ol test circuit fig. 3 v oh test circuit fig. 4 v ol test circuit fig. 5 uvlo test circuit fig. 6 i flh test circuit fig. 7 t plh /t phl /t r /t f test circuit and wave forms vcc i oh i f i f i f i f 10 ma, 10khz, duty= 50% vcc vcc vcc 100ma 100ma 2.5v vcc vcc vo > 5v vo vcc vo t phl t plh i f v o 80% 50% 20% t r t f 1 f 1 f 1 f 1 f 1 f 1 f 1 f 10nf i ol 10nf a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 7 of 18 sep 06, 2013 v oh 26 v 1 v v ol v cm 0 v v o (switch a: i f = 10 ma) v o (switch b: i f = 0 ma) t = v t v cm t shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 shield v clamp 1 4 3 2 8 5 6 7 vcc v cm vo i f b a 2.5v i clamp vcc 3v v tclamp vcc 1 f 1 f 1 f fig. 8 cmr test circuit and wave forms fig. 9 i clamp test circuit fig. 10 v tclamp test circuit a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 8 of 18 sep 06, 2013 typical characteristics (t a = 25 c, unless otherwise specified) high level output voltage ? output supply voltage v oh ? v cc (v) high level output current i oh (a) high level output voltage ? output supply voltage vs. high level output current 0.0 0.5 1.0 1.5 2.5 2.0 0 -10 -8 -6 -4 - 2 - 40c t a = 125c 25c forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage 1.0 0.01 0.1 1.0 10 100 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t a = +125c +100c +85c +50c +25c -20c - 40c ambient temperature t a (c) detector power dissipation p c (mw) detector power dissipation vs. ambient temperature 25 50 75 100 150 125 0 300 250 200 150 100 50 ambient temperature t a (c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature 25 50 75 100 150 125 0 50 40 30 20 10 forward current i f (ma) output voltage v o (v) output voltage vs. forward current 1 0 023 35 30 25 20 15 10 5 v cc = 30 v, v ee = gnd ambient temperature t a (c) threshold input current i flh / i fhl (ma) threshold input current vs. ambient temperature 3 2 1 0 - 50 - 25 100 125 50 75 025 150 i flh i fhl v cc = 30 v, v ee = gnd, i f = 10 ma v cc = 30 v, v ee = gnd, v th = 5 v i flh i fhl remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 9 of 18 sep 06, 2013 output supply voltage v cc (v) propagation delay time, pulse width distortion vs. output supply voltage propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) 15 20 25 30 200 150 100 50 0 t phl pwd t plh propagation delay time, pulse width distortion vs. load capacitance load capacitance c g (nf) 01020 30 40 50 t phl t plh pwd propagation delay time, pulse width distortion vs. load resistance load resistance r g () propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time, pulse width distortion vs. ambient temperature ambient temperature t a (c) t phl t plh pwd 200 150 100 50 0 200 150 100 50 0 low level output current i ol (a) low level output voltage v ol (v) low level output voltage vs. low level output current 0 10 8 6 4 2 0 0.5 1.0 1.5 2.5 2.0 - 40c 25c t a = 125c forward current i f (ma) propagation delay time, pulse width distortion vs. forward current propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) 71 01 31 6 200 150 100 50 0 t phl pwd t plh 02 55 07 5 200 150 100 50 0 t phl pwd t plh - 25 0 25 50 10075 - 50 125 150 v ee = gnd, i f = 10 ma, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, i f = 0 ma v cc = 30 v, v ee = gnd, i f = 10 ma, r g = 10 , f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, i f = 10 ma, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, i f = 10 ma, c g = 10 nf, f = 10 khz, duty cycle = 50% remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 10 of 18 sep 06, 2013 ambient temperature t a (c) supply current vs. ambient temperature high level supply current i cch (ma), low level supply current i ccl (ma) 2.5 1.5 2.0 1.0 0.5 0.0 ambient temperature t a (c) supply voltage v cc (v) supply current vs. supply voltage high level supply current i cch (ma), low level supply current i ccl (ma) 15 20 30 25 2.5 2.0 0.0 0.5 1.0 1.5 i ccl (i f = 0 ma) high level output voltage ? supply voltage v oh ? v cc (v) high level output voltage ? supply voltage vs. ambient temperature 0.0 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 - 25 0 25 50 10075 - 50 125 150 - 25 0 25 50 10075 - 50 125 150 - 25 0 25 50 10075 - 50 125 150 - 25 0 25 50 10075 - 50 125 150 - 25 0 25 50 10075 - 50 125 150 ambient temperature t a (c) high level output current i oh (a) high level output current vs. ambient temperature ambient temperature t a (c) low level output voltage v ol (v) low level output voltage vs. ambient temperature 0.25 0.0 0.05 0.10 0.15 0.20 ambient temperature t a (c) low level output current i ol (a) low level output current vs. ambient temperature 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 v cc = 30 v, v ee = gnd, v o = open v ee = gnd, v o = open v cc = 30 v, v ee = gnd, i f = 10 ma, i o = ?100 ma v cc = 30 v, v ee = gnd, i f = 0 ma, i o = 100 ma v cc = 30 v, v ee = gnd, i f = 10 ma, v cc ?v o = 4 v v cc = 30 v, v ee = gnd, i f = 0 ma, v o = 2.5 v i ccl (i f = 0 ma) i cch (i f = 10 ma) i cch (i f = 10 ma) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 11 of 18 sep 06, 2013 output voltage vs. supply voltage supply voltage v cc ? v ee (v) output voltage v o (v) 0 5 10 15 20 14 12 10 8 6 4 2 0 uvlo hys v uvlo+ v uvlo- (12.4 v) (11.2 v) load resistance r g () power consumption per cycle e sw ( j) 20 40 30 010 50 8 7 0 1 3 2 5 4 6 power consumption per cycle vs. load resistance q g = 1 000 nc q g = 100 nc q g = 500 nc clamp pin threshold voltage v clamp (v) clamp output peak current i clamp (a) clamp output peak current vs. clamp pin threshold voltage ambient temperature t a (c) clamp output peak current i clamp (a) 1.0 2.0 1.5 0.5 2.5 2.0 0.0 1.0 0.5 1.5 clmap output peak current vs. ambient temperature 0.0 ambient temperature t a (c) clamp pin threshold voltage v t clamp (v) clamp pin threshold voltage vs. ambient temperature 4.5 1.5 2.0 2.5 3.0 3.5 4.0 3.0 0.0 0.5 1.0 1.5 2.0 2.5 - 25 0 25 50 10075 - 50 125 150 - 25 0 25 50 10075 - 50 125 150 v cc = 30 v, v ee = gnd, i f = 0 ma v cc = 30 v, v ee = gnd, i f = 10 ma, fsw = 10 khz v cc = 30 v , v ee = gnd , i f = 0 ma v cc = 30 v , v ee = gnd , i f = 0 ma, v clamp = 2.5 v remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 12 of 18 sep 06, 2013 taping specifications (unit: mm) ps9332l-e3 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 17.51.0 21.51.0 2.00.1 4.00.1 6.350.1 8.00.1 1.5 +0.1 ?0 1.750.1 4.5 max. 7.50.1 10.20.1 16.00.3 0.35 1.5 +0.1 ?0 4.050.1 outline and dimensions (tape) tape direction outline and dimensions (reel) packing: 2 000 pcs/reel 15.9 to 19.4 outer edge of flange a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 13 of 18 sep 06, 2013 tape direction outline and dimensions (tape) outline and dimensions (reel) packing: 2 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 23.9 to 27.4 outer edge of flange 25.51.0 29.51.0 2.00.1 4.00.1 6.350.1 8.00.1 2.0 +0.1 ?0 1.5 +0.1 ?0 +0.3 ?0.1 4.050.1 1.750.1 24.0 4.5 max. 12.0 0.1 0.35 11.50.1 ps9332l2-e3 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 14 of 18 sep 06, 2013 recommended mount pad dimensions (unit: mm) part number ps9307l ps9307l2 lead bending a lead bending type (gull-wing) for long creepage distance (surface mount) lead bending type (gull-wing) for surface mount 9.2 10.2 b 1.27 1.27 c 0.8 0.8 d 2.2 2.2 d c b a ps9332l ps9332l2 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 15 of 18 sep 06, 2013 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temp erature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220c 180c package surface temperature t (c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260c max. 120c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pins) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) cautions ? fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 16 of 18 sep 06, 2013 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocoupler?s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. usage cautions 1. this product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. board designing (1) by-pass capacitor of more than 1.0 f is used between v cc and gnd near device. also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) when designing the printed wiring board, ensure that the pattern of the igbt collectors/emitters is not too close to the input block pattern of the photocoupler. if the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the igbt output side might affect the photocoupler?s led input, leading to malfunction or degradation of characteristics. (if the pattern needs to be close to the input block, to prevent the led from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the led is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) pin 2,4 (which is an nc *1 pin) can either be connected directly to the gnd pin on the led side or left open. unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. note: *1. nc: non-connection (no connection). 3. make sure the rise/fall time of the forward current is 0.5 s or less. 4. in order to avoid malfunctions, make sure th e rise/fall slope of the supply voltage is 3 v/ s or less. 5. avoid storage at a high temperature and high humidity. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 17 of 18 sep 06, 2013 specification of vde marks license document parameter symbol spec. unit maximum repetitive peak operating isolation voltage u iorm 1 130 v peak partial discharge test voltage at 100% production test u pr = 1.875 u iorm. , method b, t m =1sec, p d < 5 pc u pr 1 808 v peak partial discharge test voltage at type test and sample test u pr = 1.875 u iorm. , method a, t m =10sec, p d < 5 pc u pr 2 119 v peak maximum transient isolation volt age (transient overvoltage t ini =60sec) u iotm 8 000 v peak installation classification (iec 60664/ din en 60664-1/ vde0110 part 1) for rated mains voltage < 300 vr.m.s. for rated mains voltage < 600 vr.m.s. for rated mains voltage < 1 000 vr.m.s. i - iv i - iv i - iii comparative tracking index (iec 60112/ din en 60112/ vde 0303 part 11) cti 175 material group (din en 60664 -1/ vde0110 part 1) iii a pollution degree (din en 60664-1/ vde0110 part 1) 2 climatic category (iec 60068-1/ din en 60068-1) 40/125/21 operating temperature range t a ?40 to +125 c storage temperature range t stg ?55 to +150 c isolation resistance, minimum value v io = 500 vdc at t a = 25c v io = 500 vdc at t a max. at least 100c ris min. ris min. 10 12 10 11 safety limiting values ratings (maximum allowable in the event of a fault or a failure, see thermal derating curve) maximum ambient safety temperature maximum input current maximum output power isolation resistance at v io = 500 vdc, t a =ts ts isi pso ris min. 175 400 700 10 9 c ma mw a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9332l, ps9332l2 chapter title r08ds0105ej0100 rev.1.00 page 18 of 18 sep 06, 2013 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps9332l, ps9332l2 data sheet description rev. date page summary 0.01 nov 30, 2012 ? first edition issued throughout ?preliminary data sheet? is changed to ?data sheet.? p.1 addition of safety standards p.3 addition of ordering information p.4 modification of absolute maximum ratings p.5 modification of electrical / switching characteristics p.6 to 7 modification of test circuit p.8 to 11 addition of typical characteristics 1.00 sep 06, 2013 p.17 addition of specification of vde marks license document
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. 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